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集成多芯片模塊

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DXG2MH50A-50N* LGA 6mm×10mm 4700~5000 50.0 38.8 40.5 28.0 Released Product
DF1G0015-08N LGA 4mm×4mm 20~1500 8.0 39.4 59.4 17.2 Engineering Sample
Test condition: Single-Carrier W-CDMA, IQ magnitude clipping, Input signal PAR = 7.5 dB @ 0.01 % probability on CCDF. ACPR measured in 3.84 MHz channel bandwidth @ ±5 MHz offset.
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DXG2MH50A-50N*


Brief description for the product

DXG2MH50A-50N*

DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2496

MHz

Frequency (Max.)

2690

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

49.9

dBm

Power Gain @ 2600 MHz

15.9

dB

Efficiency @ 2600 MHz

56.5

%

ACPR @ 2600 MHz-32.5dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DF1G0015-08N


Brief description for the product

DF1G0015-08N

DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz. 

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

20

MHz

Frequency (Max.)

1500

MHz

Supply Voltage (Typ.)

28

V

Psat@325 MHz

39.7

dBm

Power Gain @ 325 MHz

17.5

dB

Efficiency @ 325 MHz

63.8

%


Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.